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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB595 DESCRIPTION With TO-220C package Complement to type 2SD525 High breakdown voltage :VCEO=-100V Low collector saturation volage : VCE(sat)=-2.0V(Max) APPLICATIONS Power amplifier applications Recommend for 30W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base PARAMETER Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC IE IB PC Tj Tstg HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Base current SEM GE Open base OND IC TOR UC VALUE -100 -100 -5 -5 -5 -4 UNIT V V V A A A W ae ae CONDITIONS Open emitter Open collector Collectorl power dissipation Junction temperature Storage temperature TC=25ae 40 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Emitter-base breakdown votage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=-50mA; IB=0 IE=-10mA; IC=0 IC=-4A;IB=-0.4 A IC=-4A ; VCE=-5V VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-4A ; VCE=-5V IC=-1A ; VCE=-5V IE=0; VCB=-10V;f=1MHz 40 20 MIN -100 -5 TYP. 2SB595 SYMBOL V(BR)CEO V(BR)EBO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB MAX UNIT V V -2.0 -1.5 -100 -1 240 |I V V A mA O Transition frequency Output capacitance Y hFE-1 classifications R 40-80 HAN INC 70-140 120-240 SEM GE OND IC TOR UC 5 270 MHz pF 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB595 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.10 mm) 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB595 SEM GE HAN INC OND IC TOR UC 4 |
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